SI4703DY vishay siliconix new product document number: 71316 s-21261?rev. d, 05-aug-02 www.vishay.com 1 load switch with level-shift product summary v ds2 (v) r ds(on) ( ) i d (a) 0.046 @ v gs2 = 10 v 4.0 30 0.066 @ v gs2 = 4.5 v 3.3 s 2 v in v on/off s 1 1 5, 6, 7 8 2 q1 q2 3, 4 so-8 s 1 v hv v on/off v in s 2 v in s 2 v in 5 6 7 8 top view 2 3 4 1 v hv absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit input voltage v in 30 on/off voltage v on/off 8 v continuous a 4.0 load current pulsed b i l 20 a continuous intrinsic diode conduction a i s -1.15 maximum power dissipation a p d 1.20 w operating junction and storage temperature range t j , t stg -55 to 150 c esd rating, mil-std-883d human body model (100 pf, 1500 ) esd 3 kv thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient (t = steady state) a r thja 85 105 maximum junction-to-foot (q2) r thjf 29 35 c/w specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit off characteristics reverse leakage current i fl v in = 30 v, v on/off = 0 v, v hv = 0 v 1 a diode forward voltage v sd i s = -1.15 a 0.7 1.1 v on characteristics v on/off = 0 v, i d = 4 a, v hv = 10 v, v s2 = 0 v 0.035 0.046 on-resistance (q2) r ds(on) v on/off = 0 v, i d = 3.3 a, v hv = 4.5 v, v s2 = 0 v 0.054 0.066 on-state (q2) drain-current i d(on) v in-out 0.1 v, v in = 5 v, v on/off = 0 v, v hv = 10 v 10 a notes a. surface mounted on fr4 board. b. pulse test: pulse width 300 s, duty cycle 2%.
SI4703DY vishay siliconix new product www.vishay.com 2 document number: 71316 s-21261 ? rev. d, 05-aug-02 typical characteristics (25 c unless noted) 0.00 0.05 0.10 0.15 0.20 0.25 036912 v ds vs. i d 0.00 0.05 0.10 0.15 0.20 0.25 036912 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0 5 10 15 20 25 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 0.0 0.4 0.8 1.2 1.6 2.0 0 5 10 15 20 25 i d - (a) (v) v ds v on/off = 0 v v hv = 10 v v s2 = 0 v 0.0 0.2 0.4 0.6 0.8 1.0 036912 t j = 125 c t j = 25 c t j = 125 c t j = 25 c t j = 125 c t j = 25 c t j = 125 c t j = 25 c v ds vs. i d i d - (a) (v) v ds v on/off = 0 v v hv = 4.5 v v s2 = 0 v v ds vs. v hv (v) v ds v on/off = 0 v i ds = 1 a v s2 = 0 v v ds vs. v hv (v) v ds v on/off = 0 v i ds = 5 a v s2 = 0 v - on-resistance ( r ss(on) ) t j = 125 c t j = 25 c r ds vs. v hv v on/off = 0 v i ds = 1 a v s2 = 0 v normalized on-resistance vs. junction temperature (normalized) - on-resistance ( r ds(on) ) t j - junction temperature ( c) v in = 10 v v on/off = 0 v i ds = 1 a v s2 = 0 v v hv = 4.5 v v hv - (v) v hv - (v) v hv - (v)
SI4703DY vishay siliconix new product document number: 71316 s-21261 ? rev. d, 05-aug-02 www.vishay.com 3 typical characteristics (25 c unless noted) 0 2 4 6 8 10 10 30 50 70 90 110 0.00 0.06 0.12 0.18 0.24 0.30 10 30 50 70 90 110 0 5 10 15 20 25 10 30 50 70 90 110 t d(on) variation with r g /v in 0 30 60 90 120 150 10 30 50 70 90 110 v in = 5 v r g (k ) ( time s) v on/off = 2 v v hv = 12 v c o = 10 f i l = 1 a t rise variation with r g /v in r g (k ) ( time s) v on/off = 2 v v hv = 12 v c o = 10 f i l = 1 a t d(off) variation with r g /v in v in = 3.3 v v in = 5 v r g (k ) ( time s) v on/off = 2 v v hv = 12 v c o = 10 f i l = 1 a t f variation with r g /v in v in = 3.3 v v in = 5 v r g (k ) ( time s) v on/off = 2 v v hv = 12 v c o = 10 f i l = 1 a 10 -3 10 -2 1 10 600 10 -1 10 -4 100 normalized thermal transient impedance, junction-to-ambient 2 1 0.1 0.01 normalized effective transient thermal impedance 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r thja = 80 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm square wave pulse dureation (sec) v in = 3.3 v v in = 5 v v in = 3.3 v
SI4703DY vishay siliconix new product www.vishay.com 4 document number: 71316 s-21261 ? rev. d, 05-aug-02 typical characteristics (25 c unless noted) 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance typical application circuit s 2 v in v on/off s 1 1 5, 6, 7 8 2 q1 q2 3, 4 v hv 5-v bus 12 v note: voltage difference between pull-up voltage, 12 v, and bus voltage, 5 v, should be greater than 4.5 v. r l
|
